Important Note

This entire repo was AI created - including all of the data within. The intent was to A) help me with my personal electronics inventory; and B) see how I could use AI to make that process a bit easier. DO NOT TRUST!

2N7002 N-Channel MOSFET

Details

• Location: Cabinet-6, Bin 1, Container B
• Category: Discrete Semiconductors
• Brand: Multiple (Nexperia, ON Semiconductor, STMicroelectronics)
• Part Number: 2N7002
• Model: 2N7002
• Package: SOT-23-3
• Quantity: 20+ units
• Status: Available
• Price Range: $0.05-0.15 per unit
• Datasheet: 2N7002 Datasheet
• Product URL: DigiKey - 2N7002

Description

The 2N7002 is a 60V N-Channel Trench MOSFET from multiple manufacturers (Nexperia, ON Semiconductor, STMicroelectronics) designed for general-purpose switching and logic-level applications. With a maximum drain current of 300mA and low on-resistance, this device is ideal for low-power switching, ESD protection, and logic level conversion circuits. The compact SOT-23 surface-mount package makes it one of the most popular small-signal MOSFETs.

Specifications

Electrical Characteristics

• Drain-Source Voltage (VDS): 60V (maximum)
• Drain Current (ID): 300mA (maximum)
• Gate-Source Voltage (VGS): ±20V (maximum)
• Gate Threshold Voltage (VGS(th)): 0.5V to 1.5V (typical)
• On-State Resistance (RDS(on)): 5Ω (typical at VGS = 5V)
• Power Dissipation: Depends on application
• Operating Temperature: -55°C to +150°C
• Junction Temperature: 150°C (maximum)

Mechanical Characteristics

• Package: SOT-23-3 (Surface Mount)
• Pin Count: 3 pins
• Mounting: Surface Mount
• RoHS Compliant: Yes

Pin Configuration

Standard SOT-23-3 N-Channel MOSFET:

Pin 1: Gate (G)
Pin 2: Drain (D)
Pin 3: Source (S)

Applications

• General-purpose switching
• Logic level conversion
• ESD protection circuits
• Low-power load switching
• Signal routing and multiplexing
• Microcontroller I/O switching
• Battery management circuits
• Portable device power management

Key Features

• 60V Rating: Suitable for various supply voltages
• 300mA Drain Current: Adequate for low-power switching
• Logic-Level Gate Drive: Can be driven directly from microcontroller outputs
• Low On-Resistance: 5Ω typical reduces power dissipation
• Compact Package: SOT-23-3 saves PCB space
• Widely Available: Multiple manufacturers ensure supply
• General-Purpose Design: Versatile for many applications

Circuit Integration

Basic Switching Circuit

Connect for N-Channel switching:

• Gate to control signal (logic level, 0V to 5V)
• Drain to load or signal
• Source to ground
• Pull-down resistor on gate for reliable OFF state

Gate Drive Considerations

• Gate must be pulled to ground to turn OFF
• Gate pulled toward positive supply to turn ON
• Typical gate drive voltage: 0V to 5V for logic-level operation
• Pull-down resistor (10kΩ typical) recommended on gate

ESD Protection Application

• Gate connected to signal line
• Source to ground
• Drain to protected signal
• Provides low-impedance path for ESD events

Technical Notes

• N-Channel device: Gate must be positive relative to source to conduct
• Logic-level gate drive simplifies circuit design
• Low on-resistance minimizes power dissipation
• Suitable for both DC and switching applications
• Very popular for ESD protection and logic level conversion
• Thermal management typically not required for low-current applications
• Multiple manufacturers ensure availability and compatibility

Tags

mosfet, n-channel, 60v, 300ma, sot-23, switching, logic-level, trench, digikey, cabinet-6, bin-1, status-available

Notes

Extremely popular and versatile N-Channel MOSFETs for general-purpose switching and logic applications. The 2N7002’s combination of 60V rating, 300mA current capability, and logic-level gate drive makes it ideal for microcontroller-based circuits and ESD protection. Stock of 20+ units provides excellent supply for multiple projects and prototyping work. Available from multiple manufacturers ensuring consistent supply.